The IRF350 TO-3 N Channel Power Mosfet also features all of the well-established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. These IRF 350 Encapsulation N channel MOSFET is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Features Of IRF350 Encapsulation TO-3 N Channel Power Mosfets:
- 100% brand new product.
- Easy to use and easy to install.
- Repetitive Avalanche Ratings.
- Dynamic DV/DT Rating.
- Hermetically Sealed.
- Simple Drive Requirements.
- ESD Rating: Class 1C per MIL-STD-750.
- Method of 1020.
Specifications Of N-Channel Power MOSFET Transistor:
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: Unipolar
- Drain-source voltage: 400V
- Drain current: 14A
- Power dissipation: 150W
- Case: TO3
- Mounting: THT
- 1 x IRF350 Encapsulation TO-3 N Channel Power Mosfets
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