IRF350 Encapsulation TO-3 N Channel Power Mosfets

The IRF350 TO-3 N Channel Power Mosfet also features all of the well-established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. These IRF 350 Encapsulation N channel MOSFET is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features Of IRF350 Encapsulation TO-3 N Channel Power Mosfets:

• 100% brand new product.
• Easy to use and easy to install.
• Repetitive Avalanche Ratings.
• Dynamic DV/DT Rating.
• Hermetically Sealed.
• Simple Drive Requirements.
• ESD Rating: Class 1C per MIL-STD-750.
• Method of 1020.

Specifications Of N-Channel Power MOSFET Transistor:

1. Type of transistor: N-MOSFET
2. Technology: HEXFET®
3. Polarisation: Unipolar
4. Drain-source voltage: 400V
5. Drain current: 14A
6. Power dissipation: 150W
7. Case: TO3
8. Mounting: THT

Package Includes:

• 1 x IRF350 Encapsulation TO-3 N Channel Power Mosfets

Best Online Shopping website for IRF350 Encapsulation TO-3 N Channel Power Mosfet in cheap price in Karachi, Lahore, Islamabad, Rawalpindi, Peshawar, Multan, Quetta, Faisalabad and all over Pakistan.

• SKU: RAWLIXIRF
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• Category: Semiconductor Components & ICs
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