IRF840 N-channel 8A 500V Power MOSFET in Pakistan
SKU: DBS178,LS10,Th2,KRT
The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the MOSFET is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with an I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.
One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0.85 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.
Pin Configuration
|
Pin Number |
Pin Name |
Description |
|
1 |
Source |
Current flows out through Source (maximum 8A) |
|
2 |
Gate |
Controls the biasing of the MOSFET (Threshold voltage 10V) |
|
3 |
Drain |
Current flows in through Drain |
Features
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 8A
- Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 500V
- Drain-Source Resistance (RDS) is 0.85 Ohms
- Rise time and the fall time is 23nS and 20nS
- Available in To-220 package
Applications
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 8A
- Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
- Drain to Source Breakdown Voltage: 500V
- Drain-Source Resistance (RDS) is 0.85 Ohms
- Rise time and the fall time is 23nS and 20nS
- Available in To-220 package
Datasheet:
Download
Package Includes:
1 x IRF840 N-channel 8A 500V Power MOSFET
