BS170 N-Channel FET is enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. BS170 have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Note, the Gate pin is not offset as incorrectly shown in the datasheet.
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.